Juq-867 Eng Sub

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These data demonstrate that the enhanced thermal path and reduced thermomechanical strain directly translate into superior RF stability and power handling. Integration of JUJ‑867 into a 5‑G mmWave transceiver

The relentless scaling of radio‑frequency (RF) and power‑electronics devices demands substrates that simultaneously exhibit ultra‑low thermal‑expansion (CTE), high thermal conductivity, and excellent dielectric performance. This paper introduces , a ceramic‑metal composite engineered via spark‑plasma sintering (SPS) to meet these requirements. Comprehensive material‑characterization (XRD, SEM, laser‑flash analysis) confirms a CTE of 1.2 × 10⁻⁶ K⁻¹, thermal conductivity of 210 W·m⁻¹·K⁻¹, and dielectric loss tan δ < 0.001 at 10 GHz. Integration of JUJ‑867 into a 5‑G mmWave transceiver demonstrates a 22 % reduction in frequency drift under a ±50 °C temperature swing and a 15 % improvement in power‑handling capability compared with conventional AlN substrates. The results position JUQ‑867 as a promising platform for 5‑G/6‑G, high‑power LED drivers, and emerging quantum‑device packaging. high‑power LED drivers